Synchronized Mid‐Infrared Beam Characterization of Narrow Gap Semiconductors


The near‐ and mid‐infrared output from the idler of an optical parametric oscillator (OPO) and from antimonide‐based narrow gap semiconductors is imaged using an infrared camera that yields 30 Hz (interlaced) and 60 Hz (deinterlaced) images. These images are collected in free‐running, synchronized, and slow phase slip modes utilizing hardware and software platforms for synchronization of the camera with the 10 Hz, 4 ns output from the OPO. This method is useful for analyzing mid‐infrared semiconductor output as well as correlating that output with characteristics of the optical pump used to stimulate mid‐infrared emission.

In AIP Conference Proceedings
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